삼성전자, 업계 최초 HKMG 공정 적용 고용량 DDR5 메모리 개발
1초에 30GB 용량의 UHD 영화 2편 정도를 처리할 수 있는 속도
DDR5는 차세대 D램 규격으로 기존 DDR4 대비 2배 이상의 성능이며, 앞으로 데이터 전송 속도가 7200Mbps로도 확장될 전망이다. 이는 1초에 30GB 용량의 UHD 영화 2편 정도를 처리할 수 있는 속도다.
Samsung Electronics develops industry's first high-capacity DDR5 memory applied with HKMG process
The speed that can handle about 2 UHD movies with 30GB capacity per second
[Introduction of the case / Reporter Park Yeon-pa] = Samsung Electronics developed the industry's first 512GB DDR5 memory module with the industry's largest capacity applying the “High-K Metal Gate (HKMG)” process.
DDR5 is a next-generation DRAM standard, which is more than twice the performance of existing DDR4, and data transmission speed is expected to expand to 7200Mbps in the future. This is the speed that can process about 2 UHD movies with a capacity of 30GB per second.
The high-capacity DDR5 module developed by Samsung Electronics is expected to serve as a key solution for the development of advanced industries such as next-generation computing, large-capacity data centers, and artificial intelligence by realizing the industry's highest level of high capacity, high performance, and low power.
The newly developed DDR5 memory is characterized by implementing high performance and low power by applying a material with a high dielectric constant (K) to the process to prevent leakage current due to the miniaturization of the memory semiconductor process.
Samsung Electronics' DDR5 memory module applied with HKMG is expected to be an optimal solution for applications where power efficiency is important, such as data centers, as the power consumption is reduced by about 13% compared to the existing process.
In addition, this product is the first general-purpose DRAM product to use 8-stage TSV (Through Silicon Via) technology.
In line with the expansion of the high-capacity memory market and the spread of data-based applications, Samsung Electronics developed a DDR5 512GB module by applying 8-layer TSV technology based on 16Gb (gigabit).
In 2014, Samsung Electronics introduced a high-capacity module product from 64GB to 256GB to the server market by applying a 4-stage TSV process to the world's first general-purpose DRAM, DDR4 memory.
"Samsung Electronics applied the HKMG process to memory semiconductors for the first time in the industry based on its competitiveness in memory semiconductor and system semiconductor technology," said Youngsoo Son, Senior Vice President of Product Planning Team at Samsung Electronics' Memory Division. We expect to accelerate the development of high-performance computers that will expand their application fields to autonomous driving, smart cities, and medical industries with energy efficiency.”
"The importance of next-generation DDR5 memory is emerging in cloud data centers, networks, and edge computing, where the amount of data to be processed is exponentially increasing," said Carolyn Duran, VP of Memory & IO Technology, Intel. "We are working closely with Samsung Electronics to introduce DDR5 memory compatible with Sapphire Rapids, an Intel? Xeon? Scalable) processor."
Samsung Electronics plans to commercialize high-capacity DDR5 memory applied with HKMG process and 8-stage TSV technology in a timely manner according to customer demand in the next-generation computing market.
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